Weibull analysis of dielectric breakdown in a self-assembled nanodielectric for organic transistors

Journal of Physical Chemistry Letters

Volumn 1, Issue 22, 2010, Pages 3292-3297

  Schlitz, Ruth A ^a,b   Yoon, Kunho ^a,b   Fredin, Lisa A ^b   Ha, Young Geun ^b   Ratner, Mark A ^a,b   Marks, Tobin J ^a,b   Lauhon, Lincoln J ^a,b  

^a Northwestern University   (United States)

^b NORTHWESTERN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BREAKDOWN CHARACTERISTICS; BREAKDOWN VOLTAGE; DIELECTRIC BREAKDOWNS; INORGANIC DIELECTRICS; METAL-INSULATOR-SEMICONDUCTOR DEVICES; OPERATING VOLTAGE; ORGANIC TRANSISTOR; POST ANNEALING; REDUCING ATMOSPHERE; SELF-ASSEMBLED; THERMAL-ANNEALING; WEIBULL ANALYSIS;

ANNEALING; ELECTRIC BREAKDOWN; LEAKAGE CURRENTS; METAL INSULATOR BOUNDARIES; MIS DEVICES; SEMICONDUCTOR DEVICES; WEIBULL DISTRIBUTION;

DIELECTRIC MATERIALS;

EID: 78649642168     PISSN: None     EISSN: 19487185     Source Type: Journal    
DOI: 10.1021/jz101325r     Document Type: Article

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