Poly(3-hexylthiophene) field-effect transistors with high dielectric constant gate insulator

Journal of Applied Physics

Volumn 95, Issue 1, 2004, Pages 316-322

  Wang, Guangming ^a   Moses, Daniel ^a   Heeger, Alan J ^a   Zhang, Hong Mei ^b   Narasimhan, Mux ^b   Demaray, R E ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Symmorphix   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; APPROXIMATION THEORY; CARRIER MOBILITY; ELECTRIC POTENTIAL; LEAKAGE CURRENTS; PERMITTIVITY; SEMICONDUCTING POLYMERS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA; TITANIUM OXIDES;

ALUMINUM OXIDE; GATE INSULATOR; HIGH DIELECTRIC CONSTANT; POLYHEXYLTHIOPHENE;

FIELD EFFECT TRANSISTORS;

EID: 0942268359     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1630693     Document Type: Article

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