High mobility top-gated poly(3-hexylthiophene) field-effect transistors with high work-function Pt electrodes

Thin Solid Films

Volumn 518, Issue 14, 2010, Pages 4024-4029

  Baeg, Kang Jun ^b,c   Khim, Dongyoon ^b   Kim, Dong Yu ^b   Koo, Jae Bon ^c   You, In Kyu ^c   Choi, Won San ^d   Noh, Yong Young ^a,c  

^a Hanbat National University   (South Korea)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

^c Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^d Korea Basic Science Institute (KBSI)   (South Korea)

Author keywords

Contact resistance; Organic field effect transistors; Poly(3 hexylthiophene); Pt electrode

Indexed keywords

AIR AMBIENT; BOTTOM-CONTACT; CURRENT CROWDING; CURRENT INJECTIONS; DEVICE STABILITY; DEVICE STRUCTURES; GATE ELECTRODES; HIGH CRYSTALLINITY; HIGH MOBILITY; ORGANIC SEMICONDUCTOR; POLY (3-HEXYLTHIOPHENE); POLY(3-HEXYLTHIOPHENE) FIELD-EFFECT TRANSISTORS (P3HT-FET); PT ELECTRODE; REGIO-REGULAR; RR-P3HT; TOP-GATE;

CARRIER MOBILITY; CONTACT RESISTANCE; FIELD EFFECT TRANSISTORS; FREE RADICALS; GATE DIELECTRICS; GATES (TRANSISTOR); PLATINUM;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 77950629382     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.01.026     Document Type: Article

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