High field-effect mobility bottom-gated metallorganic chemical vapor deposition ZnO thin-film transistors with Si O2 / Si3 N4 bilayer gate dielectric

Journal of the Electrochemical Society

Volumn 157, Issue 12, 2010, Pages

  Remashan, K ^a   Choi, Y S ^b   Park, S J ^b   Jang, J H ^a  

^a Department of Information and Communications ^*  (South Korea)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER; CHANNEL LAYERS; DEVICE PROPERTIES; FIELD-EFFECT MOBILITIES; GLASS SUBSTRATES; GRAIN SIZE; HIGH FIELD; LOWER DENSITY; METALORGANIC CHEMICAL VAPOR DEPOSITION; ON/OFF CURRENT RATIO; ZNO; ZNO FILMS;

CRYSTAL ORIENTATION; DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POINT DEFECTS; SILICON; SILICON COMPOUNDS; SUBSTRATES; THIN FILM TRANSISTORS; VAPOR DEPOSITION; ZINC OXIDE;

GATE DIELECTRICS;

EID: 78449285296     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3499348     Document Type: Article

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