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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 7, 2001, Pages 4672-4676

Thickness dependence of properties of plasma-deposited amorphous SiO2 films

(2) He, Le Nian a Hasegawa, Seiichi b

a ZHEJIANG UNIVERSITY (China)

b KANAZAWA UNIVERSITY (Japan)

Author keywords

Amorphous silicon oxide films; Infrared spectroscopy; PECVD; Si dangling bonds; Si O Si bonds; Stress

Indexed keywords

CHEMICAL BONDS; INFRARED SPECTROSCOPY; ION BOMBARDMENT; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICA; STRESSES; SUBSTRATES;

DANGLING BONDS;

AMORPHOUS FILMS;

EID: 0035387833 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.40.4672 Document Type: Article

Times cited : (5)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.