Epitaxial growth and surface modeling of ZnO on c -plane Al2 O3

Applied Physics Letters

Volumn 85, Issue 26, 2004, Pages 6338-6340

  Murphy, T E ^a   Walavalkar, S ^a   Phillips, J D ^a  

^a University of Michigan   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BEAM EQUIVALENT PRESSURE (BEP); DAS SARMA-TAMBORENEA (DT) MODEL; REFLECTANCE SPECTROMETRY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION (RHEED);

ALUMINUM COMPOUNDS; CARRIER CONCENTRATION; CRYSTALLOGRAPHY; DIFFUSION; ELECTRON MOBILITY; EPITAXIAL GROWTH; HIGH ENERGY ELECTRON DIFFRACTION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; OPTOELECTRONIC DEVICES; PULSED LASER DEPOSITION; STOICHIOMETRY;

ZINC OXIDE;

EID: 13444287946     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1842357     Document Type: Article

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