Characteristics of AgInSbTe-SiO2 nanocomposite thin film applied to nonvolatile floating gate memory devices

Nanotechnology

Volumn 21, Issue 42, 2010, Pages

  Chiang, Kuo Chang ^a   Hsieh, Tsung Eong ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AGINSBTE; ANALYTICAL RESULTS; APPLIED FIELD; CONDUCTION MECHANISM; CORE STRUCTURE; CURRENT TRANSPORT; DEVICE STRUCTURES; ELECTRICAL MEASUREMENT; FABRICATION PROCESS; FLOATING GATE MEMORIES; MATRIX; MEMORY WINDOW; NANO-COMPOSITE LAYERS; NANOCOMPOSITE THIN FILMS; NON-VOLATILE; NON-VOLATILE MEMORIES; NONVOLATILE FLOATING-GATE MEMORY DEVICES; SCHOTTKY EMISSIONS; SPACE-CHARGE-LIMITED; SPUTTERING DEPOSITION; THERMAL HISTORY; VOLTAGE SWEEP;

DEPOSITION; NANOCOMPOSITES; SILICA; TELLURIUM COMPOUNDS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

NONVOLATILE STORAGE;

EID: 77958614383     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/42/425204     Document Type: Article

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