Effects of forming gas annealing on the memory characteristics of Ge nanocrystals embedded in LaAlO3 high-k dielectrics for flash memory device application

Thin Solid Films

Volumn 513, Issue 1-2, 2006, Pages 182-186

  Lu, X B ^a   Lee, P F ^a   Dai, J Y ^a  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

Author keywords

Annealing; Floating gate memory; Germanium; High k dielectric; Lanthanide aluminium oxide; Nanocrystals

Indexed keywords

ANNEALING; CAPACITANCE; DATA STORAGE EQUIPMENT; DIELECTRIC DEVICES; FLASH MEMORY; PULSED LASER DEPOSITION; TRANSMISSION ELECTRON MICROSCOPY; VOLTAGE MEASUREMENT;

FLOATING GATE MEMORY; HIGH-K DIELECTRIC; LANTHANIDE ALUMINIUM OXIDE; NANOCRYSTALS;

NANOSTRUCTURED MATERIALS;

EID: 33745282940     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.02.015     Document Type: Article

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