Memory characteristics of self-assembled tungsten nanodots dispersed in silicon nitride

Applied Physics Letters

Volumn 93, Issue 11, 2008, Pages

  Pei, Yanli ^a   Nishijima, Masahiko ^b   Fukushima, Takafumi ^a   Tanaka, Tetsu ^a   Koyanagi, Mitsumasa ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING; DATA STORAGE EQUIPMENT; DIFFRACTION; HOLOGRAPHIC INTERFEROMETRY; LITHOGRAPHY; METALS; NANOSTRUCTURED MATERIALS; NITRIDES; NONMETALS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SILICON; SILICON NITRIDE; TUNGSTEN; WINDOWS;

CHARGE-LOSS; DATA-RETENTION; FLOATING GATE; MEMORY WINDOWS; METAL-OXIDE SEMICONDUCTORS; NANO-DOTS; NON-VOLATILE MEMORY; SELF-ASSEMBLED; SELF-ASSEMBLED NANODOT DEPOSITION; SILICON SUBSTRATES; TRANSMISSION ELECTRON; X-RAY DIFFRACTION PATTERNS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 52349093717     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2986409     Document Type: Article

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