Electronic structure of Te/Sb/Ge and Sb/Te/Ge multi layer films using photoelectron spectroscopy

Journal of the American Chemical Society

Volumn 131, Issue 38, 2009, Pages 13634-13638

  Ju, Heyuck Baeck ^a   Ann, Young Kun ^a   Jeong, Kwang Ho ^a   Cho, Mann Ho ^a   Ko, Dae Hong ^a   Oh, Jae Hee ^b   Jeong, Hongsik ^b  

^a Yonsei University   (South Korea)

^b Technology Development Team   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO; ANNEALING PROCESS; ATOMIC DIFFUSIONS; CRYSTALLINE PHASE; EFFUSION CELLS; GE-SB-TE; HIGH CONCENTRATION; LINE SHAPE; NEAR-SURFACE; PHOTOEMISSION SPECTROSCOPY; REACTION PROCESS; STABLE STRUCTURES; STOICHIOMETRIC CHANGES; TOTAL ENERGY;

ATOMIC SPECTROSCOPY; CELL MEMBRANES; DENSITY FUNCTIONAL THEORY; ELECTRONIC STRUCTURE; EMISSION SPECTROSCOPY; GERMANIUM; GRAFTING (CHEMICAL); PHASE INTERFACES; PHOTOELECTRICITY; PHOTOELECTRON SPECTROSCOPY; STOICHIOMETRY; SURFACE DIFFUSION; SYNTHESIS (CHEMICAL); TELLURIUM COMPOUNDS; WAVE FUNCTIONS;

MULTILAYER FILMS;

ANTIMONY; GERMANIUM; TELLURIUM;

ARTICLE; CHEMICAL BOND; CHEMICAL STRUCTURE; DENSITY FUNCTIONAL THEORY; ENERGY; FILM; STOICHIOMETRY; THICKNESS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 70349973079     PISSN: 00027863     EISSN: None     Source Type: Journal    
DOI: 10.1021/ja901596h     Document Type: Article

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