LaAlO3 nanocrystals embedded in amorphous Lu2O 3 high-k gate dielectric for floating gate memory application

Electrochemical and Solid-State Letters

Volumn 9, Issue 6, 2006, Pages

  Yuan, C L ^a   Darmawan, P ^a   Setiawan, Y ^a   Lee, P S ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; DIELECTRIC MATERIALS; EMBEDDED SYSTEMS; LANTHANUM COMPOUNDS; LUTETIUM COMPOUNDS; PULSED LASER DEPOSITION; ROBUSTNESS (CONTROL SYSTEMS);

AERIAL DENSITY; AVERAGE MEAN SIZE; DATA RETENTION; FLOATING GATE MEMORY;

NANOSTRUCTURED MATERIALS;

EID: 33645722737     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2193069     Document Type: Article

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