Nanoscale (EOT = 5.6 nm) nonvolatile memory characteristics using n-Si/SiO2/HfAlO nanocrystal/Al2O3/Pt capacitors

Nanotechnology

Volumn 19, Issue 43, 2008, Pages

  Maikap, S ^a   Rahaman, S Z ^a   Tien, T C ^b  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC LAYER DEPOSITION; CAPACITANCE; CAPACITORS; DATA STORAGE EQUIPMENT; DIELECTRIC DEVICES; ELASTICITY; ELECTRIC EQUIPMENT; HIGH RESOLUTION ELECTRON MICROSCOPY; HYSTERESIS; MICROSCOPIC EXAMINATION; NANOCRYSTALLINE ALLOYS; NANOCRYSTALS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; PHOTOELECTRON SPECTROSCOPY; PLATINUM; PULSED LASER DEPOSITION; SEMICONDUCTOR STORAGE; WINDOWS; X RAY PHOTOELECTRON SPECTROSCOPY;

ANNEALING TREATMENTS; ATOMIC LAYERS; CHARGE CONFINEMENTS; CHARGE STORAGE CHARACTERISTICS; EQUIVALENT OXIDE THICKNESSES; GATE VOLTAGES; HIGH RESOLUTIONS; HIGH TEMPERATURES; MEMORY CAPACITORS; MEMORY STRUCTURES; MEMORY WINDOWS; NANOCRYSTAL MEMORIES; NANOSCALE; NONVOLATILE MEMORIES; RETENTION TIMES; TRANSMISSION ELECTRON MICROSCOPY IMAGES; X-RAY PHOTOELECTRON SPECTROSCOPIES;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

ALUMINUM OXIDE; NANOCRYSTAL; PLATINUM; SILICON; SILICON DIOXIDE;

ARTICLE; ELECTRIC POTENTIAL; HIGH TEMPERATURE; HYSTERESIS; NANOANALYSIS; PRIORITY JOURNAL; STRUCTURE ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 56349122800     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/43/435202     Document Type: Article

References (24)

1. Hwang J-R et al 2006 IEDM Tech. Dig. p 161
2. Maikap S, Lee H Y, Wang T-Y, Tzeng P-J, Wang C C, Lee L S, Liu K C, Yang J-R and Tsai M-J 2007 Semicond. Sci. Technol. 22 884
3. Tan Y-N, Chim W-K, Cho B J and Choi W-K 2004 IEEE Trans. Electron Devices 51 1143
4. Specht M, Reisinger H, Hofmann F, Schulz T, Landgraf E, Luyken R J, Rosner W, Grieb M and Risch L 2005 Solid-State Electron. 49 716
5. Hsu T-H, You H-C, Ko F-H and Lei T-F 2006 Electrochem. Soc. 11 G934
6. Wang X and Kwong D-L 2006 IEEE Trans. Electron Devices 53 78-82
7. Maikap S, Tzeng P-J, Wang T Y, Lin C H, Lee L S, Yang J-R and Tsai M-J 2008 Electrochem. Solid State Lett. 11 K50
8. Tawari S, Rana F, Chan K, Shi L and Hanafi H 1996 Appl. Phys. Lett. 69 1232
9. Lee P F, Lu X B, Dai J Y, Chan H L W, Jelenkovic E and Tong K Y 2006 Nanotechnology 17 1202
10. Sim J S, Lee J D and Park B-G 2004 Nanotechnology 15 S603
11. Ma X 2008 Nanotechnology 19 275706
12. Lu T Z, Alexe M, Scholz M R, Talelaev V and Zacharias M 2005 Appl. Phys. Lett. 87 202110
13. You H C, Hsu T-H, Ko F-H, Huang J-W and Lei T-F 2006 IEEE Electron Device Lett. 27 644
14. Liu Z, Lee C, Narayanan V, Pei G and Kan E C 2002 IEEE Trans. Electron Devices 49 1606
15. Lee J J, Harada Y, Pyun J W and Kwong D L 2005 Appl. Phys. Lett. 86 102505
16. Yim S S, Lee M S, Kim K S and Kim K B 2006 Appl. Phys. Lett. 89 093115
17. Seol K S, Choi S J, Choi J Y, Jang E J, Kim B K, Park S J, Cha D G, Song I Y, Park J B and Park Y 2006 Appl. Phys. Lett. 89 083109
18. Choi S, Kim S S, Chang M, Hwang H, Jeon S and Kim C 2005 Appl. Phys. Lett. 86 123110
19. Maikap S, Wang T Y, Tzeng P-J, Lin C H, Lee L S, Yang J-R and Tsai M-J 2007 Appl. Phys. Lett. 90 253108
20. Maikap S, Tzeng P J, Lee H Y, Wang C C, Tien T C, Lee L S and Tsai M-J 2007 Appl. Phys. Lett. 91 043114
21. Lin Y H, Chien C H, Lin C T, Chang C Y and Lei T F 2006 IEEE Trans. Electron Devices 53 782
22. Wang Y Q, Singh P K, Yoo W J, Yeo Y C, Samudra G, Chin A, Hwang W S, Chen J H, Wang S J and Kwong D L 2005 IEDM Tech. Dig. p 169
23. Tzeng P-J, Maikap S, Liang C S, Chen P S and Lee L S 2005 IEEE Trans. Device Mater. Reliab. 5 168
24. He G, Zhang L D, Meng G W, Li G H, Fang Q and Zhang J P 2007 J. Appl. Phys. 102 094103