Negative differential resistance in GaN nanowire network

Applied Physics Letters

Volumn 96, Issue 5, 2010, Pages

  Dragoman, M ^a   Konstantinidis, G ^b   Cismaru, A ^a   Vasilache, D ^a   Dinescu, A ^a   Dragoman, D ^c   Neculoiu, D ^d   Buiculescu, R ^e   Deligeorgis, G ^b   Vajpeyi, A P ^b   Georgakilas, A ^b  

^a NATIONAL INSTITUTE FOR RESEARCH AND DEVELOPMENT IN MICROTECHNOLOGIES   (Romania)

^b INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

^c UNIVERSITY OF BUCHAREST   (Romania)

^d UNIVERSITY POLITEHNICA OF BUCHAREST   (Romania)

^e UNIVERSITY OF CRETE   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE NANOWIRES; GAN NANOWIRES; INTER-DIGITATED ELECTRODES; NEGATIVE DIFFERENTIAL RESISTANCES; ROOM TEMPERATURE; SI SUBSTRATES;

GALLIUM NITRIDE; NANOWIRES; NEGATIVE RESISTANCE;

GALLIUM ALLOYS;

EID: 76449108223     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3309670     Document Type: Article

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