Defect-induced negative differential resistance of GaN nanowires measured by conductive atomic force microscopy

Applied Physics Letters

Volumn 94, Issue 18, 2009, Pages

  Chu, Wen Huei ^a   Chiang, Hsin Wei ^a   Liu, Chuan Pu ^a   Lai, Yi Feng ^a   Hsu, Kuang Yuan ^a   Chung, Hung Chin ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVE ATOMIC FORCE MICROSCOPIES; CURRENT-VOLTAGE CURVES; ELECTRON TRANSPORTS; ENERGY-BAND DIAGRAMS; FORWARD BIAS; GAN NANOWIRES; INELASTIC TUNNELING PROCESS; NEGATIVE DIFFERENTIAL RESISTANCES; THERMAL CHEMICAL VAPOR DEPOSITIONS;

ATOMIC FORCE MICROSCOPY; ATOMS; ELECTRIC WIRE; GALLIUM ALLOYS; GALLIUM NITRIDE; NANOWIRES; SEMICONDUCTING GALLIUM; TRANSMISSION ELECTRON MICROSCOPY;

NEGATIVE RESISTANCE;

EID: 65549092727     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3130728     Document Type: Article

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