Photoionisation spectroscopy of traps in AlGaN/GaN high electron mobility transistors grown by molecular beam epitaxy

Electronics Letters

Volumn 39, Issue 18, 2003, Pages 1354-1356

  Klein, P B ^a   Mittereder, J A ^a   Binari, S C ^a   Roussos, J A ^a   Katzer, D S ^a   Storm, D F ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ENERGY GAP; HOT CARRIERS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PHOTOIONIZATION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SPECTROSCOPY; STRESSES; THRESHOLD VOLTAGE;

PHOTOIONIZATION SPECTROSCOPY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0141829079     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20030836     Document Type: Article

References (10)

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8. KLEIN, P.B., et al.: 'Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy', Appl. Phys. Lett., 2001, 79, (21), pp. 3527-3529
9. MITTEREDER, J.A., et al.: 'Current collapse induced in AlGaN/GaN high electron mobility transistors by bias stress', Appl. Phys. Lett., 2003 (accepted for publication)
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