GaN/AlN free-standing nanowires grown by molecular beam epitaxy

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 1556-1558

  Tchernycheva, M ^a   Sartel, C ^b   Cirlin, G ^b,c   Travers, L ^b   Patriarche, G ^b   Largeau, L ^b   Mauguin, O ^b   Harmand, J C ^b   Dang, Le Si ^d   Renard, J ^e   Gayral, B ^e   Nevou, L ^a,b,c,d,e   Julien, F ^a  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b UNIV PARIS SUD   (France)

^c RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

^d UNIV GRENOBLE ALPES   (France)

^e CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; GALLIUM NITRIDE; III-V SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; NITRIDES; OPTICAL PROPERTIES;

AXIAL GROWTH; EMISSION LINES; FLUX RATIO; LATERAL GROWTH; LATERAL GROWTH RATES; MICRO PHOTOLUMINESCENCE; MICRO-CATHODOLUMINESCENCE; STRUCTURAL AND OPTICAL PROPERTIES;

WIDE BAND GAP SEMICONDUCTORS;

EID: 77951239082     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778479     Document Type: Conference Paper

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