Profile evolution during cold plasma beam etching of silicon

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 7 SUPPL. B, 1997, Pages 4854-4865

  Ono, Kouichi ^a   Tuda, Mutumi ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Cold plasma beams; Etch anisotropy; Etching of silicon in chlorine; Inverse RIE lag; Ion shadowing; Microscopic uniformity; Neutral shadowing; Neutral transport by surface reemission; Plasma beam etching; Profile evolution; Reactive ion etching (RIE) lag

Indexed keywords

ANISOTROPY; CHLORINE; COMPUTER SIMULATION; NUMERICAL ANALYSIS; REACTIVE ION ETCHING; SILICON;

COLD PLASMA BEAM ETCHING;

PLASMA ETCHING;

EID: 0031177597     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.4854     Document Type: Article

References (52)

1. R. A. Gottscho, C. W. Jurgensen and D. J. Vitkavage: J. Vac. Sci. & Technol. B 10 (1992) 2133.
2. S. R. Leone: Jpn. J. Appl. Phys. 34 (1995) 2073, and references therein.
3. M. L. Yu and L. A. DeLouise: Surf. Sci. Rep. 19 (1994) 285, and references therein.
4. D. R. Miller: Atomic and Molecular Beam Methods, ed. G. Scoles (Oxford University Press, Oxford, 1988) Vol. 1, Chap. 2, p. 14.
5. Y. Teraoka and I. Nishiyama: Appl. Phys. Lett. 63 (1993) 3355.
6. Y. Teraoka and I. Nishiyama: Jpn. J. Appl. Phys. 33 (1994) 2240.
7. Y. Teraoka and I. Nishiyama: J. Appl. Phys. 79 (1996) 4397.
8. K. P. Giapis, T. A. Moore and T. K. Minton: J. Vac. Sci. & Technol. A 13 (1995) 959.
9. G. S. Hwang and K. P. Giapis: Proc. 48th Gaseous Electronics Conference, Berkeley, 1995, Bull. Am. Phys. Soc. 40 (1995) 1564.
10. K. Ono and T. Oomori: U.S. Patent No. 5,108,535 (28 April 1992).
11. K. Ono, M. Tuda, M. Taki and T. Oomori: Ext. Abstr. IUVSTA Int. Workshop on Plasma Sources and Surface Interactions in Materials Processing, Fuji-Yoshida, Japan, 1995, Paper J6.
12. Y. S. Chou and L. Talbot: AIAA J. 5 (1967) 2166.
13. R. B. Fraser, F. Robben and L. Talbot: Phys. Fluids 14 (1971) 2317.
14. M. Nishida: Z. Naturforsch. 30a (1975) 1563.
15. A. Kimura and M. Nishida: Trans. Jpn. Soc. Aero, & Space Sci. 22 (1979) 162.
16. K. Ono, M. Tuda, M. Taki and T. Oomori: Proc. 13th Symp. on Plasma Processing, SPP-13, Tokyo, Japan, 1996, ed. T. Makabe (JSAP Div. of Plasma Electronics, Tokyo, 1996) p. 187.
17. H. F. Winters and J. W. Coburn: Surf. Sci. Rep. 14 (1992) 161, and references therein.
18. K. Ono, M. Tuda, K. Nishikawa, T. Oomori and K. Namba: Jpn. J. Appl. Phys. 33 (1994) 4424.
19. G. King, F. C. Sze, P. Mak, T. A. Grotjohn and J. Asmussen: J. Vac. Sci. & Technol. A 10 (1992) 1265.
20. T. Nakano, N. Sadeghi, D. J. Trevor, R. A. Gottscho and R. W. Boswell: J. Appl. Phys. 72 (1992) 3384.
21. J. A. O'Neill, M. S. Barnes and J. H. Keller: J. Appl. Phys. 73 (1993) 1621.
22. T. Nakano, K. P. Giapis, R. A. Gottscho, T. C. Lee and N. Sadeghi: J. Vac. Sci. & Technol. B 11 (1993) 2946.
23. R. A. Gottscho: J. Vac. Sci. & Technol. B 11 (1993) 1884.
24. T. Oomori, M. Taki, K. Nishikawa, H. Ootera and K. Ono: Jpn. J. Appl. Phys. 34 (1995) 2101.
25. T. Oomori, M. Taki, K. Nishikawa and H. Ootera: Jpn. J. Appl. Phys. 34 (1995) 6809.
26. M. Tuda, K. Ono and K. Nishikawa: J. Vac. Sci. & Technol. B 14 (1996) 3291.
27. M. Tuda and K. Ono: Jpn. J. Appl. Phys. 35 (1996) L1374.
28. M. Tuda, K. Nishikawa and K. Ono: J. Appl. Phys. 81 (1997) 960.
29. N. A. Krall and A. W. Trivelpiece: Principles of Plasma Physics (McGraw-Hill, New York, 1973) Chap. 7, p. 349.
30. J. C. Arnold and H. H. Sawin: J. Appl. Phys. 70 (1991) 5314.
31. N. F. Ramsey: Molecular Beams (Oxford University Press, Oxford, 1956) Chap. 2, p. 11.
32. A. D. Bailey III, M. C. M. van de Sanden, J. A. Gregus and R. A. Gottscho: J. Vac. Sci. & Technol. B 13 (1995) 92.
33. A. D. Bailey III and R. A. Gottscho: Jpn. J. Appl. Phys. 34 (1995) 2083.
34. D. J. Oostra, A. Haring, R. P. van Ingen and A. E. de Vries: J. Appl. Phys. 64 (1988) 315.
35. R. J. Gnaedinger, Jr.: J. Vac. Sci. & Technol. 6 (1969) 355.
36. V. K. Singh, E. S. G. Shaqfeh and J. P. McVittie: J. Vac. Sci. & Technol. B 10 (1992) 1091.
37. J. C. Arnold, D. C. Gray and H. H. Sawin: J. Vac. Sci. & Technol. B 11 (1993) 2071.
38. M. Balooch, M. Moalem, W.-E. Wang and A. V. Hamza: J. Vac. Sci. & Technol. A 14 (1996) 229.
39. T. M. Mayer, R. A. Barker and L. J. Whitman: J. Vac. Sci. & Technol. 18 (1981) 349.
40. D. J. D. Sullivan, H. C. Flaum and A. C. Kummel: J. Phys. Chem. 97 (1993) 12051.
41. T. Banjo, K. Ono, M. Tuda and K. Nishikawa: Vacuum 39 (1996) 584 [in Japanese].
42. M. Tuda and K. Ono: Jpn. J. Appl. Phys. 36 (1997) 2482.
43. M. Tuda and K. Ono: Jpn. J. Appl. Phys. 36 (1997) L518.
44. K. Ono: Proc. 8th Symp. on Plasma Science for Materials, SPSM-8, Tokyo, Japan, 1995, ed. Y. Horiike (Organizing Committee of SPSM, Tokyo, 1995) p. 99.
45. W. Fichtner: VLSI Technology, ed. S. M. Sze (McGraw-Hill, New York, 1988) 2nd ed., Chap. 10, p. 457.
46. E. S. G. Shaqfeh and C. W. Jurgensen: J. Appl. Phys. 66 (1989) 4664.
47. J. C. Arnold, H. H. Sawin, M. Dalvie and S. Hamaguchi: J. Vac. Sci. & Technol. A 12 (1994) 620.
48. S. Hamaguchi and M. Dalvie: J. Vac. Sci. & Technol. A 12 (1994) 2745.
49. J. O. Hirschfelder, C. F. Curtiss and R. B. Bird: Molecular Theory of Gases and Liquids (Wiley, New York, 1954) Appendix, p. 1111.
50. K. Ozasa and Y. Aoyagi: Appl. Phys. Lett. 64 (1994) 2220.
51. L. Bárdos, S. Berg and H.-O. Blom: Appl. Phys. Lett. 55 (1989) 1615.
52. J. J. Beulens, A. T. M. Wilbers, M. Haverlag, G. S. Oehrlein, G. M. W. Kroesen and D. C. Schram: J. Vac. Sci. & Technol. B 10 (1992) 2387.