RIE lag in high aspect ratio trench etching of silicon

Microelectronic Engineering

Volumn 35, Issue 1-4, 1997, Pages 45-50

  Jansen, Henri ^a   De Boer, Meint ^a   Wiegerink, Remco ^a   Tas, Niels ^a   Smulders, Edwin ^a   Neagu, Christina ^a   Elwenspoek, Miko ^a  

^a UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC FIELD EFFECTS; IONS; MASKS; SEMICONDUCTING SILICON; SULFUR COMPOUNDS;

ANGULAR DISTRIBUTION; ETCH RATE; ETCHING HIGH ASPECT RATIO TRENCH; ION DEFLECTION; ION DEPLETION; RADICAL;

REACTIVE ION ETCHING;

EID: 0031072583     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(96)00142-6     Document Type: Article

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