Effects of electron temperature in high-density Cl2 plasma for precise etching processes

Applied Physics Letters

Volumn 69, Issue 8, 1996, Pages 1056-1058

  Samukawa, Seiji ^a   Tsukada, Tsutomu ^b  

^a NEC CORPORATION   (Japan)

^b Anelva Company Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001243464     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116929     Document Type: Article

References (5)

1. N. Fujiwara, T. Maruyama, M. Yoneda, and K. Tsukamoto, in Proceedings of the 15th Dry Process Symposium (Institute of Electrical Engineering of Japan, Tokyo, 1993), p. 45.
2. H. Ohtake and S. Samukawa, in Proceedings of 17th Dry Process Symposium (Institute of Electrical Engineering of Japan, Tokyo, 1995), p. 45.
3. S. Samukawa, Y. Nakagawa, T. Tsukada, H. Ueyama, and K. Shinohara, Jpn. J. Appl. Phys. 34, 6805 (1995).
4. T. Morimot, C. Takahashi, and S. Matsuo, in Proceedings of the 13th Dry Process Symposium (Institute of Electrical Engineering of Japan, Tokyo, 1991), p. 57.
5. K. Hashimoto, T. Ohtsuka, K. Kawaguchi, M. Aoyama, and D. Matsunaga, Jpn. J. Appl. Phys. 32, 6109 (1993).