Effects of bias frequency on reactive ion etching lag in an electron cyclotron resonance plasma etching system

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 15, Issue 3, 1997, Pages 664-667

  Doh, Hyun Ho ^a,b   Yeon, Chung Kyu ^a   Whang, Ki Woong ^a  

^a Seoul National University   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0345518951     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580702     Document Type: Article

References (13)

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