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Journal of Non-Crystalline Solids

Volumn 356, Issue 35-36, 2010, Pages 1863-1866

Effect of thermal annealing on the Ir/Ag contact to p-type GaN

(3) Chuah, L S a Hassan, Z a Teo, S G a

a SCHOOL OF PHYSICS (Malaysia)

Author keywords

Ag; Annealing; Contact resistance; GaN; Ir; Wide band gap semiconductors

Indexed keywords

AG; ANNEAL TEMPERATURES; BARRIER FORMATION; BI-LAYER; CAPPING LAYER; CURRENT-VOLTAGE MEASUREMENTS; ELECTRICAL CHARACTERISTIC; ELECTRONIC TRANSPORT; GAN; HIGH-QUALITY OHMIC CONTACTS; I-V BEHAVIOR; INTERFACE PROPERTY; IR; NON-LINEAR; OHMIC BEHAVIOR; P-TYPE GAN; SCHOTTKY BARRIERS; SEM; SEMICONDUCTOR INTERFACES; SPECIFIC CONTACT RESISTIVITY; SURFACE PLASMON COUPLING; SURFACE REGION; THERMAL STABILITY; THERMAL-ANNEALING; THERMALLY STABLE; THIN LAYERS; TRANSMISSION LINE METHODS; VISIBLE LIGHT EMISSION; VOID FORMATION; WIDE-BAND-GAP SEMICONDUCTOR;

AGGLOMERATION; ANNEALING; CONTACT RESISTANCE; ELECTRIC CONTACTORS; ELECTRIC FIELDS; ENERGY GAP; GALLIUM ALLOYS; GALLIUM NITRIDE; INTERMETALLICS; IRIDIUM; OHMIC CONTACTS; SCANNING ELECTRON MICROSCOPY; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR JUNCTIONS; SILVER; STATISTICAL MECHANICS; SURFACE MORPHOLOGY; THERMODYNAMIC STABILITY; THIN FILMS;

METAL ANALYSIS;

EID: 77957897080 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/j.jnoncrysol.2010.06.012 Document Type: Article

Times cited : (6)

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