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Volumn 86, Issue 9, 1999, Pages 5079-5084

Formation and deterioration mechanisms of low-resistance TaTi ohmic contacts for p-GaN

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001651160     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371483     Document Type: Article
Times cited : (13)

References (20)
  • 7
    • 3242821791 scopus 로고    scopus 로고
    • Gordon and Breach, Japan
    • S. Pearton, GaN and Related Materials (Gordon and Breach, Japan, 1997), Vol. 2, p. 333.
    • (1997) GaN and Related Materials , vol.2 , pp. 333
    • Pearton, S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.