Low resistance ohmic contact to p-type GaN using Pd/Ir/Au multilayer scheme

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 3, 2005, Pages 1072-1075

  Bae, J W ^a   Hossain, T ^a   Adesida, I ^a   Bogart, K H ^b   Koleske, D ^b   Allerman, A A ^b   Jang, J H ^c  

^a University of Illinois at Urbana Champaign   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DEPLETION REGION; GA VACANCIES; METAL-SEMICONDUCTOR JUNCTIONS; OHMIC CONTACT RESISTIVITY;

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; GALLIUM NITRIDE; METALLIZING; OHMIC CONTACTS; RAPID THERMAL ANNEALING;

MULTILAYERS;

EID: 31144473272     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1924416     Document Type: Article

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