Thermal stability of Ni/Ag contacts on p-type GaN

Physica Status Solidi C: Conferences

Volumn 1, Issue 10, 2004, Pages 2528-2532

  Hassan, Z ^a   Lee, Y C ^a   Yam, F K ^a   Yap, Z J ^a   Zainal, N ^a   Hassan, H Abu ^a   Ibrahim, K ^a  

^a SCHOOL OF PHYSICS   (Malaysia)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYOGENICS; HEAT TREATMENT; NICKEL; OHMIC CONTACTS; OPTICAL DEVICES; POINT CONTACTS; SEMICONDUCTOR DEVICE MANUFACTURE; SILVER; THERMODYNAMIC STABILITY;

CONTACT RESISTANCE (RC); CONTACT TECHNOLOGY; METAL-SEMICONDUCTOR CONTACTS; WIDE BAND GAP SEMICONDUCTORS;

GALLIUM NITRIDE;

EID: 7044227801     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200405009     Document Type: Conference Paper

References (23)

1. S. Nakamura, T. Mukai, and M. Senoh, Appl. Phys. Lett. 64, 1687 (1994).
2. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Choco, Appl. Phys. Lett. 72, 2014 (1998).
3. M. Razeghi and A. Rogalski, J. Appl. Phys. 79(10), 7433 (1996).
4. J. C. Carrano, P. A. Grudowski, C. J. Biting, R. D. Dupuis, and J. C. Campbell, Appl. Phys. Lett. 70(15), 1992 (1997).
5. M. E. Lin, Z. Ma, F. Y. Huang, Z. F. Fan, L. H. Allen, and H. Morkoc, Appl. Phys. Lett. 64, 1003 (1994).
6. J. S. Foresi and T. D. Moustaka, Appl. Phys. Lett. 62, 2859 (1993).
7. Zhifang Fan, S. Noor Mohammad, Wook Kim, Ozgur Aktas, Andrei E. Botchkarev, and Hadis Morkoc, Appl. Phys. Lett. 68, 1672 (1996).
8. Jin-Kuo Ho, Charng-Shyang Jong, Chien C. Chiu, Chao-Nien Huang, Chin-Yuen Chen, and Kwang-Kuo Shih, Appl. Phys. Lett. 74(9), 1275 (1999).
9. D. Mistele, F. Fedler, H. Klausing, T. Rotter, J. Stemmer, O. K. Semchinova, and J. Aderhold, J. Cryst. Growth 230, 564 (2001).
10. Ja-Soon Jang, In-Sik Chang, Han-Ki Kim, Tae-Yeon Seong, Seong-Hoon Lee, and Seong-Ju Park, Appl. Phys. Lett. 74(1), 70 (1999).
11. Roland Wenzel, Gerhard G. Fischer, and Rainer Schmid-Fetzer, Mater. Sci. Semicond. 4, 367 (2001).
12. X. A. Cao and S. J. Pearton, Appl. Phys. Lett. 73, 942 (1998).
13. W. Gotz, N. M. Johnson, J. Walker, D. P. Bour, and R. A. Street, Appl. Phys. Lett. 68, 667 (1996).
14. Mi-Ran Park, Wayne A. Anderson, and Seong-Ju Park, MRS Internet J. Nitride Semicond. Res. 5S1, W11.77 (2000).
15. V. Adivarahan, A. Lunev, M. Asif Khan, J. Yang, G. Simin, M. S. Shur, and R. Gaska, Appl. Phys. Lett. 78, 2781 (2001).
16. T. C. Shen, G. B. Gao, and H. Morkoc, J. Vac Sci. Technol. B 10(5), 2113 (1992).
17. Daniel A Steigerwald, Jerome C. Bhat, Dave Collins, Robert M. Fletcher, Mari Ochiai Holcomb, Michael J. Ludowise, Paul S. Martin, and Serge L. Rudaz, IEEE J. Select. Topics Quantum Electron. 8(2), 310 (2002).
18. Jong Kyu Kim, Ho Won Jang, Changmin Jeon, Jong-Lam Lee, Current Applied Physics 1, 385 (2001).
19. Jong Kyu Kim, Jong-Lam Lee, Jae Won Lee, Hyun Eoi Shin, Yong Jo Park, and Taeil Kim, Appl. Phys. Lett. 73, 2953 (1998).
20. Ja-Soon Jang, In-Sik Chang, Han-Ki Kim, Tae-Yeon Seong, Seonghoon Lee, and Seong-Ju Park, Appl. Phys. Lett. 74, 70 (1999).
21. S. Nakamura, T. Mukai, M. Senoh, and N. Iwasa, Jpn. J. Appl. Phys. 31, L139 (1992).
22. H. Sato, T. Minami, S. Takata, and T. Yamada, Thin Solid Films 236, 27 (1993).
23. S. J. Pearton, J. C. Zolper, R. J. Shul, and F. Ren, J. Appl. Phys. 86(1), 1 (1999).