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Volumn 4, Issue 4, 2001, Pages 367-371

Ohmic contacts on p-GaN (Part II): Impact of semiconductor fabrication and surface treatment

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY OF SOLIDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SURFACE TREATMENT;

EID: 0035427690     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(00)00178-5     Document Type: Article
Times cited : (17)

References (6)
  • 1
    • 0035427736 scopus 로고    scopus 로고
    • Ohmic contacts on p-GAN (Part I): Investigation of different contact metals and their thermal treatment
    • Wenzel R., Fischer G.G., Schmid-Fetzer R. Ohmic contacts on p-GAN (Part I). investigation of different contact metals and their thermal treatment Mater Sci Semicond Process. 4(4):2001;357.
    • (2001) Mater Sci Semicond Process , vol.4 , Issue.4 , pp. 357
    • Wenzel, R.1    Fischer, G.G.2    Schmid-Fetzer, R.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.