Electrical properties of thermally stable Pt/Re/Au ohmic contacts to p-type GaN

Solid-State Electronics

Volumn 48, Issue 9, 2004, Pages 1563-1568

  Reddy, V Rajagopal ^a,b   Kim, Sang Ho ^a   Song, June O ^a   Seong, Tae Yeon ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b UNIVERSITY OF MYSORE   (India)

Author keywords

Electrical properties; Glancing angle X ray diffraction; Ohmic contacts; P GaN; Spectroscopy

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; GOLD; METALLIZING; MORPHOLOGY; OHMIC CONTACTS; PLATINUM; RHENIUM; SEMICONDUCTOR DOPING; SEMICONDUCTOR LASERS; SURFACE TREATMENT; THERMODYNAMIC STABILITY; X RAY DIFFRACTION ANALYSIS;

BUFFERED OXIDE ETCH (BOE); CONTACT RESISTIVITY; GLANCING ANGLE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 2942640018     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2003.12.041     Document Type: Conference Paper

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