Ohmic contacts properties of Ni/Ag metallization scheme on p-type GaN

Journal of Non-Crystalline Solids

Volumn 356, Issue 3, 2010, Pages 181-185

  Chuah, L S ^a   Hassan, Z ^a   Abu Hassan, H ^a  

^a SCHOOL OF PHYSICS   (Malaysia)

Author keywords

Alloys; III V semiconductors; Silicon; Sputtering

Indexed keywords

ALN; ANNEALING TEMPERATURES; BI-LAYER; CAPPING LAYER; CURRENT-VOLTAGE MEASUREMENTS; DEEP-LEVEL DEFECTS; DEPLETION LAYER; ELECTRICAL STABILITY; GAN LAYERS; HIGH PURITY; HIGH QUALITY; HIGH TEMPERATURE; II-IV SEMICONDUCTORS; METALLIZATIONS; MG-DOPING; NATIVE OXIDES; NI DIFFUSION; NITROGEN PLASMAS; P-TYPE DOPANT; P-TYPE GAN; RADIO FREQUENCIES; SEM; SPECIFIC CONTACT RESISTIVITY; SURFACE REGION; THERMALLY STABLE; TRANSMISSION LINE METHODS; VISIBLE WAVELENGTHS;

CRYSTAL GROWTH; GALLIUM NITRIDE; MASKS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NITROGEN PLASMA; OHMIC CONTACTS; PHASE INTERFACES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DOPING; SILICON ALLOYS; SILVER; SILVER ALLOYS;

GALLIUM ALLOYS;

EID: 73649112390     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2009.11.025     Document Type: Article

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