High-reflectivity Al-Pt nanostructured Ohmic contact to p-GaN

IEEE Transactions on Electron Devices

Volumn 53, Issue 10, 2006, Pages 2448-2453

  Kim, Ho Gyoung ^a   Deb, Parijat ^a   Sands, TImothy ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

Contact resistivity; Flip chip configuration; Pt islands; Schottky barrier height (SBH); Tunneling

Indexed keywords

CONTACT RESISTIVITY; FLIP-CHIP CONFIGURATION; PT ISLANDS; SCHOTTKY BARRIER HEIGHT (SBH); TUNNELING;

ALUMINUM; DISTILLATION; ELECTRIC CONTACTORS; ELECTRIC FIELDS; FLIP CHIP DEVICES; GALLIUM ALLOYS; GALLIUM NITRIDE; GRAIN SIZE AND SHAPE; HOLE CONCENTRATION; LIGHT EMITTING DIODES; NANOSTRUCTURED MATERIALS; OHMIC CONTACTS; REFLECTION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR METAL BOUNDARIES; SILVER; TEMPERATURE MEASUREMENT;

PLATINUM;

EID: 33846396066     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.882287     Document Type: Article

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