Deep level defects involved in MOS device instabilities

Microelectronics Reliability

Volumn 47, Issue 6, 2007, Pages 890-898

  Lenahan, P M ^a  

^a The Pennsylvania State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL PROPERTIES; DEFECTS; PARAMAGNETIC RESONANCE; PHYSICAL PROPERTIES; PROBLEM SOLVING; STABILITY;

DEEP LEVEL DEFECTS; MOS INSTABILITY; NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI);

MOS DEVICES;

EID: 34247897087     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2006.10.016     Document Type: Article

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