Statistics of resistance drift due to structural relaxation in phase-change memory arrays

IEEE Transactions on Electron Devices

Volumn 57, Issue 10, 2010, Pages 2690-2696

  Boniardi, Mattia ^a   Ielmini, Daniele ^a   Lavizzari, Simone ^b   Lacaita, Andrea L ^a   Redaelli, Andrea ^b   Pirovano, Agostino ^b  

^a POLITECNICO DI MILANO   (Italy)

^b Micron   (Italy)

Author keywords

Amorphous semiconductors; chalcogenide glasses; nonvolatile memory (NVM); phase change memory (PCM); reliability estimation; structural relaxation (SR)

Indexed keywords

AMORPHOUS CHALCOGENIDE; AMORPHOUS STATE; ATOMIC REARRANGEMENTS; CHALCOGENIDE GLASS; CHALCOGENIDE MATERIALS; DEVICE RELIABILITY; IN-PHASE; MODELING APPROACH; MONTE CARLO MODEL; NON-VOLATILE MEMORIES; PHASE-CHANGE MEMORY (PCM); PHYSICAL MODELING; PHYSICS-BASED; RELIABILITY ESTIMATION; RELIABILITY EXTRAPOLATION; REVERSIBLE PHASE TRANSITION; SINGLE-CELL LEVEL; STATISTICAL ANALYSIS; STATISTICAL BEHAVIOR; TIME VARIATIONS; WORK STUDY;

AMORPHOUS SEMICONDUCTORS; DEFECT DENSITY; ESTIMATION; GLASS; MODELS; PHASE TRANSITIONS; RELIABILITY ANALYSIS; STATISTICS; STRUCTURAL RELAXATION;

PHASE CHANGE MEMORY;

EID: 77956992168     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2058771     Document Type: Article

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