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Journal of Applied Physics

Volumn 106, Issue 5, 2009, Pages

Analytical model for low-frequency noise in amorphous chalcogenide-based phase-change memory devices

(5) Betti Beneventi, G a,b Calderoni, A a Fantini, P a Larcher, L b Pavan, P b

a Numonyx (Italy)

b UNIVERSITY OF MODENA AND REGGIO EMILIA (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS CHALCOGENIDE; ANALYTICAL MODEL; BULK PROPERTIES; INSULATING PHASE; INTERFACIAL EFFECTS; LOW-FREQUENCY NOISE; MEMORY DEVICE; MODEL RESULTS; NOISE BEHAVIOR; NOISE DATA; NOISE MAGNITUDE; NOISE-TO-SIGNAL RATIOS; TRAP ENERGY; TWO-LEVEL SYSTEM;

CELL MEMBRANES; CHALCOGENIDES; COMPUTER SIMULATION; MODELS; RARE EARTH COMPOUNDS; SURVEYING INSTRUMENTS; THERMAL NOISE;

PHASE CHANGE MEMORY;

EID: 70349317372 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3160332 Document Type: Article

Times cited : (50)

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