Statistical and scaling behavior of structural relaxation effects in phase-change memory (PCM) devices

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2009, Pages 122-127

  Boniardi, Mattia ^a   Ielmini, Daniele ^a   Lavizzari, Simone ^a   Lacaita, Andrea L ^a   Redaelli, Andrea ^b   Pirovano, Agostino ^b  

^a POLITECNICO DI MILANO   (Italy)

^b Numonyx   (Italy)

Author keywords

Chalcogenide; Multi megabit array; Phase change memory; Structural relaxation

Indexed keywords

AMORPHOUS CHALCOGENIDE; ATOMIC STRUCTURE; DATA STORAGE; IN-PHASE; LONG TERM; MODELING TOOL; MULTI-MEGABIT ARRAY; PHASE-CHANGE MEMORY TECHNOLOGIES; PHYSICS-BASED; RELIABILITY EXTRAPOLATION; SCALING BEHAVIOR; STATISTICAL ANALYSIS;

APPROXIMATION THEORY; CRYSTALLIZATION; GERMANIUM; PULSE CODE MODULATION; RELIABILITY; STRUCTURAL RELAXATION; TELLURIUM COMPOUNDS;

PHASE CHANGE MEMORY;

EID: 70449084758     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2009.5173236     Document Type: Conference Paper

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