A reliable technique for experimental evaluation of crystallization activation energy in PCMs

IEEE Electron Device Letters

Volumn 29, Issue 1, 2008, Pages 41-43

  Redaelli, Andrea ^a   Pirovano, A ^a   Tortorelli, I ^a   Ielmini, D ^b   Lacaita, A L ^b  

^a STMICROELECTRONICS   (Italy)

^b POLITECNICO DI MILANO   (Italy)

Author keywords

Chalcogenide; Crystallization; Nonvolatile memory; Phase change memory (PCM); Retention

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS SEMICONDUCTORS; CHALCOGENIDES; CRYSTALLIZATION; MONTE CARLO METHODS; NONVOLATILE STORAGE;

AMORPHOUS CHALCOGENIDE; CRITICAL RESISTANCE; ELECTROTHERMAL MODEL; NONVOLATILE MEMORY;

PHASE CHANGE MEMORY;

EID: 37549012907     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.910749     Document Type: Article

References (17)

1. S. Lai and T. Lowrey, "OUM - A 180 nm nonvolatile memory cell element technology for stand alone and embedded applications," in IEDM Tech. Dig., 2001, pp. 803-806.
2. K. Kim et al., "Reliability investigations for manufacturable high density PRAM," in Proc. IRPS Tech. Dig., 2005, pp. 157-162.
3. F. Pellizzer et al., "A 90 nm phase change memory technology for stand-alone non-volatile memory applications," in VLSI Symp. Tech. Dig., 2006, pp. 122-123.
4. A. Redaelli, D. Ielmini, U. Russo, and A. L. Lacaita, "Intrinsic data retention in nanoscaled phase-change memories-Part II: Statistical analysis and prediction of failure time," IEEE Trans. Electron Devices, vol. 53, no. 12, pp. 3040-3046, Dec. 2006.
5. U. Russo, D. Ielmini, A. Redaelli, and A. L. Lacaita, "Intrinsic data retention in nanoscaled phase-change memories - Part I: Monte Carlo model for crystallization and percolation," IEEE Trans. Electron Devices, vol. 53, no. 12, pp. 3032-3039, Dec. 2006.
6. B. Gleixner et al., "Data retention characterization of phase-change memory arrays," in Proc. IRPS Tech. Dig., 2007, pp. 542-546.
7. 5 phase-change optical recording material on their crystallization behavior," Jpn. J. Appl. Phys., vol. 38, no. 8, pp. 4775-4779, Aug. 1999.
8. 5 films," J. Appl. Phys., vol. 89, no. 6, pp. 3168-3176, Mar. 2001.
9. 5 thin films," J. Appl. Phys., vol. 94, no. 7, pp. 4409-4413, Oct. 2003.
10. N. Ohshima, "Crystallization of germanium-antimony-tellurium amorphous thin film sandwiched between various dielectric protective films," Jpn. J. Appl. Phys., vol. 79, no. 11, pp. 8357-8363, Jun. 1996.
11. 5 films studied by in situ resistance measurements," Appl. Phys. Lett., vol. 85, no. 15, pp. 3044-3046, Oct. 2004.
12. J. W. Christian, The Theory of Transformation in Metals and Alloys New York: Pergamon, 1965.
13. U. Russo, D. Ielmini, and A. L. Lacaita, "A physics-based crystallization model for retention in phase-change memories," in Proc. IRPS Tech. Dig., 2007, pp. 547-553.
14. A. L. Lacaita, A. Redaelli, D. Ielmini, F. Pellizzer, A. Pirovano, A. Benvenuti, and R. Bez, "Electrothermal and phase-change dynamics in chalcogenide-based memories," in IEDM Tech. Dig., 2004, pp. 911-914.
15. A. Pirovano, A. L. Lacaita, F. Pellizzer, S. A. Kostylev, A. Benvenuti, and R. Bez, "Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials," IEEE Trans. Electron Devices, vol. 51, no. 5, pp. 714-719, May 2004.
16. D. Ielmini, A. L. Lacaita, and D. Mantegazza, "Recovery and drift dynamics of resistance and threshold voltages in phase-change memories," IEEE Trans. Electron Devices, vol. 54, no. 2, pp. 308-315, Feb. 2007.
17. C. D. Wright, M. Armand, M. M. Aziz, R. A. Cobley, S. Sendaker, and W. Yu, "Simulation studies on electrical, thermal, and phase-change behavior of GeSbTe based memory devices," in Proc. EPCOS, 2003. [Online]. Available: Www.epcos.org/papers/pdf_2003/Wright.pdf