A physics-based model of electrical conduction decrease with time in amorphous Ge2 Sb2 Te5

Journal of Applied Physics

Volumn 105, Issue 8, 2009, Pages

  Boniardi, M ^a   Redaelli, A ^b   Pirovano, A ^b   Tortorelli, I ^b   Ielmini, D ^a   Pellizzer, F ^b  

^a POLITECNICO DI MILANO   (Italy)

^b Numonyx   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS PHASE; BAND DIAGRAMS; CHALCOGENIDE MATERIALS; CONDUCTIVITY CHANGES; DRIFT MECHANISMS; DRIFT MODELS; ELECTRICAL CHARACTERISTICS; ELECTRICAL CONDUCTIONS; ELECTRICAL CONDUCTIVITIES; EXPERIMENTAL DATUM; EXPERIMENTAL PROCEDURES; GLASSY PHASE; LOW CONDUCTIVITIES; NONVOLATILE SOLID STATE MEMORIES; PHENOMENOLOGICAL RELATIONSHIPS; PHYSICAL PHENOMENON; PHYSICS-BASED MODELS; REVERSIBLE CHANGES; TIME STABILITIES;

CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; GERMANIUM;

DATA STORAGE EQUIPMENT;

EID: 65449186150     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3109063     Document Type: Article

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