On separating oxide charges and interface charges in 4H-SiC metal-oxide-semiconductor devices

Materials Science Forum

Volumn 527-529, Issue PART 2, 2006, Pages 1007-1010

  Habersat, D B ^a   Lelis, A J ^a   Lopez, G ^a   McGarrity, J M ^b   McLean, F B ^b  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b Berkeley Research Associates   (United States)

Author keywords

Charge separation; Interface traps; Oxide trapped charge

Indexed keywords

CHARGE DENSITY; INTERFACES (MATERIALS); OPTICAL PUMPING; SEMICONDUCTOR DEVICES; SILICON CARBIDE;

CHARGE SEPARATION; FLATBAND VOLTAGE; INTERFACE TRAPS; OXIDE TRAPPED CHARGE;

CHARGE TRAPPING;

EID: 36248944399     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.1007     Document Type: Conference Paper

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