A fast, simple wafer-level hall-mobility measurement technique

IEEE International Integrated Reliability Workshop Final Report

Volumn , Issue , 2009, Pages 73-76

  Yu, L C ^a,b   Cheung, K P ^a   Tilak, V ^c   Dunne, G ^c   Matocha, K ^c   Campbell, J P ^a   Suehle, J S ^a   Sheng, K ^b  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b RUTGERS UNIVERSITY   (United States)

^c GE GLOBAL RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HALL MOBILITY; POWER MOSFET; WIDE BAND GAP SEMICONDUCTORS;

ACCURATE MEASUREMENT; CHANNEL MOBILITY; DEVICE RELIABILITY; HALL MOBILITY MEASUREMENT; HIGH- K; MEASUREMENT TECHNIQUES; MOSFETS; NOVEL DEVICES; SIMPLE++; WAFER LEVEL;

SILICON CARBIDE;

EID: 77951047267     PISSN: 19308841     EISSN: 23748036     Source Type: Conference Proceeding    
DOI: 10.1109/IRWS.2009.5383030     Document Type: Conference Paper

References (6)

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4. D. K. Schroder, Semiconductor Material and Device Characterization, John Wiley & Sons, 2006
5. T. Hatakeyama et al, Materials Science Forum, Vols.483-485 (2005), pp. 829-832
6. N.S. Saks et al, Applied Physics Letters, Vols.77 (2000), pp.3281-3283