Effect of band-edge interface traps and transition region mobility on transport in 4H-SiC MOSFETs

Materials Science Forum

Volumn 645-648, Issue , 2010, Pages 975-978

  Potbhare, Siddharth ^a   Akturk, Akin ^a   Goldsman, Neil ^a   Lelis, Aivars ^b   Dhar, Sarit ^c   Agarwal, Anant ^c  

^a UNIVERSITY OF MARYLAND   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

^c Arkansas Power Electronics International Inc   (United States)

Author keywords

Device modeling; Interface traps; Mobility; SiC MOSFETs; Surface roughness; Transition region

Indexed keywords

CARRIER MOBILITY; CONDUCTION BANDS; EMPLOYMENT; MOS DEVICES; MOSFET DEVICES; NUMERICAL MODELS; SURFACE ROUGHNESS;

CONDUCTION BAND EDGE; CONDUCTION BAND ELECTRONS; DEVICE MODELING; EXPERIMENTAL CHARACTERIZATION; INTERFACE TRAPS; PHYSICS-BASED MODELS; SIC MOSFETS; TRANSITION REGIONS;

SILICON CARBIDE;

EID: 77954737103     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.645-648.975     Document Type: Conference Paper

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4. S. Potbhare, N. Goldsman, et al., IEEE Trans. on Elec. Dev., Vol. 55 (2008), p. 2029.