The optoelectronic properties of silicon films deposited by inductively coupled plasma CVD

Applied Surface Science

Volumn 257, Issue 3, 2010, Pages 817-822

  Qin, Yanli ^a   Yan, Hengqing ^a   Li, Fei ^a   Qiao, Li ^a   Liu, Qiming ^a   He, Deyan ^a  

^a LANZHOU UNIVERSITY   (China)

Author keywords

Inductively coupled plasma; Optoelectronic properties; Silicon films; Substrate temperature

Indexed keywords

AMORPHOUS FILMS; DENSITY OF GASES; HYDROGEN; INDUCTIVELY COUPLED PLASMA; LIGHT ABSORPTION; METALLIC FILMS; MICROCRYSTALLINE SILICON; PLASMA CVD; SILICON COMPOUNDS; SUBSTRATES;

INDUCTIVELY COUPLED PLASMA CHEMICAL VAPOR DEPOSITION; LOCALIZED ELECTRONIC STATE; LOW SUBSTRATE TEMPERATURE; MICROCRYSTALLINE SILICON FILMS; OPTICAL ABSORPTION COEFFICIENTS; OPTOELECTRONIC PROPERTIES; SILICON FILMS; SUBSTRATE TEMPERATURE;

AMORPHOUS SILICON;

EID: 77956613580     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.07.071     Document Type: Article

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