Lower temperature deposition of polycrystalline silicon films from a modified inductively coupled silane plasma

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 6 A, 1999, Pages 3655-3659

  Goshima, Kazutomo ^b   Toyoda, Hirotaka ^b   Kojima, Tetsuya ^b   Nishitani, Mikihiko ^a   Kitagawa, Masatoshi ^a   Yamazoe, Hiroshi ^a   Sugai, Hideo ^b  

^a PANASONIC CORPORATION   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL MODIFICATION; CRYSTALLIZATION; DEPOSITION; DIELECTRIC FILMS; GRAIN SIZE AND SHAPE; POLYCRYSTALLINE MATERIALS; RAMAN SPECTROSCOPY; SEMICONDUCTING GLASS; SEMICONDUCTING SILICON; SUBSTRATES; X RAY CRYSTALLOGRAPHY;

HIGH-DENSITY PLASMA; INDUCTIVELY COUPLED PLASMA (ICP); POLYCRYSTALLINE SILICON FILMS;

SEMICONDUCTING FILMS;

EID: 0032666402     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.3655     Document Type: Article

References (11)

1. T. Sameshima, S. Usui and M. Sekiya: IEEE Electron Device Lett. 7 (1986) 276.
2. T. Nagahara, K. Fujimoto, N. Nohno, Y. Kashiwagi and H. Kakinoki: Jpn. J. Appl. Phys. 31 (1992) 4555.
3. D. He, N. Okada, C. M. Fortman and I. Shimizu: J. Appl. Phys. 76 (1994) 4728.
4. M. Goto, H. Toyoda, M. Kitagawa, T. Hirao and H. Sugai: Jpn. J. Appl. Phys. 35 (1996) L1009.
5. M. Goto, H. Toyoda, M. Kitagawa, T. Hirao and H. Sugai: Jpn. J. Appl. Phys. 36 (1997) 3714.
6. K. Suzuki, K. Nakamura, H. Ohkubo and H. Sugai: Plasma Sources Sci. Technol. 7 (1998) 13.
7. H. Sugai, K. Nakamura and K. Suzuki: Jpn. J. Appl. Phys. 33 (1994) 2189.
8. T. Shirakawa, H. Toyoda and H. Sugai: Jpn. J. Appl. Phys. 29 (1990) L1015.
9. P. Joubert, B. Loisel, Y. Chouan and L. Haji: J. Electrochem. Soc. 134 (1987) 2541.
10. S. S. Chao, J. Gonzalez-Hernandez, D. Martin and R. Tsu: Appl. Phys. Lett. 46 (1985) 1069.
11. E. Bustarret, M. A. Hachichia and M. Brunel: Appl. Phys. Lett. 52 (1988) 1675.