Plasma parameters for fast deposition of highly crystallized microcrystalline silicon films using high-density microwave plasma

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 2 A, 2006, Pages 666-673

  Jia, Haijun ^a   Saha, Jhantu K ^a   Shirai, Hajime ^a  

^a SAITAMA UNIVERSITY   (Japan)

Author keywords

C Si; Fast deposition; High density microwave plasma; Low defect density

Indexed keywords

CRYSTALLINE MATERIALS; CRYSTALLIZATION; DEPOSITION; PARAMETER ESTIMATION; SILICON COMPOUNDS; SUBSTRATES;

FAST DEPOSITION; HIGH DENSITY MICROWAVE PLASMAS; HIGH DEPOSITION RATES; LOW DEFECT DENSITY;

PLASMAS;

EID: 32344439224     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.45.666     Document Type: Article

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