Polymorphous silicon thin films obtained by plasma-enhanced chemical vapor deposition using dichlorosilane as silicon precursor

Nanotechnology

Volumn 20, Issue 24, 2009, Pages

  Remolina, A ^a   Monroy, B M ^a   Garcia Snchez M F ^a   Ponce, A ^b   Bizarro, M ^a   Alonso, J C ^a   Ortiz, A ^a   Santana, G ^a  

^a UNIVERSIDAD NACIONAL AUTÓNOMA DE MÉXICO   (Mexico)

^b CENTRO DE INVESTIGACIÓN EN QUÍMICA APLICADA   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATRICES; AS-GROWN; CRYSTALLINITY; DEPOSITION CONDITIONS; DICHLOROSILANE; DOWNCONVERSION; OPTICAL ABSORPTION EDGE; POLYMORPHOUS SILICON; SI NANOCRYSTAL; SI NANOCRYSTALLITES; SILICON NANOCRYSTALS; SILICON PRECURSORS; SURFACE PASSIVATION; VISIBLE PHOTOLUMINESCENCE;

AMORPHOUS FILMS; ARGON; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GAS ABSORPTION; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; HYDROGEN; NANOCRYSTALS; PASSIVATION; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SPECTROSCOPIC ANALYSIS; THIN FILMS; VAPORS;

AMORPHOUS SILICON;

ARGON; DICHLOROSILANE; HYDROGEN; NANOCRYSTAL; SILANE DERIVATIVE; SILICON; UNCLASSIFIED DRUG; NANOMATERIAL;

ARTICLE; CONTROLLED STUDY; FILM; INFRARED SPECTROSCOPY; PHOTOLUMINESCENCE; PLASMA; PRIORITY JOURNAL; TRANSMISSION ELECTRON MICROSCOPY; ULTRAVIOLET RADIATION; VAPOR; ARTIFICIAL MEMBRANE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; GAS; HEAT; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SURFACE PROPERTY; ULTRASTRUCTURE;

CRYSTALLIZATION; GASES; HOT TEMPERATURE; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MEMBRANES, ARTIFICIAL; MOLECULAR CONFORMATION; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; SILANES; SILICON; SURFACE PROPERTIES;

EID: 67649180446     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/24/245604     Document Type: Article

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