The influence of H 2 /(H 2 + Ar) ratio on microstructure and optoelectronic properties of microcrystalline silicon films deposited by plasma-enhanced CVD

Applied Surface Science

Volumn 255, Issue 21, 2009, Pages 8867-8873

  Tang, Zeguo ^a   Wang, Wenbin ^a   Zhou, Bo ^a   Wang, Desheng ^a   Peng, Shanglong ^a   He, Deyan ^a  

^a LANZHOU UNIVERSITY   (China)

Author keywords

Ar diluted gas; Hydrogenated microcrystalline silicon films; microstructure; Optoelectronic property; Plasma enhanced CVD

Indexed keywords

ABSORPTION SPECTROSCOPY; ACTIVATION ENERGY; ARGON; GLOW DISCHARGES; HYDROGENATION; ION BOMBARDMENT; LIGHT ABSORPTION; LIGHT TRANSMISSION; METALLIC FILMS; MICROSTRUCTURE; PLASMA CVD; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFRACTIVE INDEX; SILICON COMPOUNDS; SURFACE ROUGHNESS;

ABSORPTION CO-EFFICIENT; DILUTED GAS; ELECTRICAL MEASUREMENT; GLOW-DISCHARGE DECOMPOSITION; HYDROGENATED MICROCRYSTALLINE SILICON; MICROCRYSTALLINE SILICON FILMS; OPTICAL TRANSMISSION SPECTRUM; OPTOELECTRONIC PROPERTIES;

MICROCRYSTALLINE SILICON;

EID: 67651158781     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.06.074     Document Type: Article

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