High-rate deposition of highly crystallized silicon films from inductively coupled plasma

Thin Solid Films

Volumn 435, Issue 1-2, 2003, Pages 39-43

  Kosku, Nihan ^a   Kurisu, Fumitada ^a   Takegoshi, Miwako ^a   Takahashi, Hiroshi ^a   Miyazaki, Seiichi ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

High rate deposition; Inductively coupled plasma; Microcrystalline silicon; Optical emission spectroscopy

Indexed keywords

CRYSTAL GROWTH; DEPOSITION; LIGHT EMISSION; PHONONS; RAMAN SCATTERING; SILICON; SPECTROSCOPIC ANALYSIS; THIN FILMS;

GAS MIXTURES;

INDUCTIVELY COUPLED PLASMA;

EID: 0038070079     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)00374-2     Document Type: Conference Paper

References (9)

1. Meier J., Fluckiger R., Keppner H., Shah A. Appl. Phys. Lett. 65:1994;860.
2. Wehrspohn R.B., Deane S.C., French I.D., Powell M.J. Thin Solid Films. 383:2001;117.
3. Goerlitzer M., Beck N., Torres P., Kroll U., Keppner H., Meier J., Koehler J., Wyrsch N., Shah A. Mater. Res. Soc. Symp.Proc. 467:1997;301.
4. Kondo M., Fukawa M., Guo L., Matsuda A. J. Non-Cryst. Solids. 266-269:2000;84.
5. Sakuma Y., Haiping L., Ueyama H., Shirai H. Thin Solid Films. 386:2001;261.
6. Goshima K., Toyoda H., Kojima T., Nishitani M., Kitagawa M., Yamazoe H., Sugai H. Jpn. J. Appl. Phys. 38:1999;3655.
7. Sakikawa N., Shishida Y., Miyazaki S., Hirose M. Sol. Energy Mater. Sol. Cells. 66:2001;337-343.
8. Okazaki Y., Miyazaki S., Hirose M. J. Non-Cryst. Solids. 266-269:2000;54.
9. Miyazaki S., Osaka Y., Hirose M. Sol. Energy Mater. 11:1984;85.