Enhancement-mode gan MIS-HEMTs for power supplies

2010 International Power Electronics Conference - ECCE Asia -, IPEC 2010

Volumn , Issue , 2010, Pages 1027-1033

  Imada, T ^a   Kanamura, M ^a   Kikkawa, T ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

ALD; Enhancement mode; GaN; MIS HEMT

Indexed keywords

ALD; CAP STRUCTURE; CURRENT STATUS; DEVICE STRUCTURES; ENHANCEMENT-MODE; GAN; GAN HEMTS; HIGH BREAKDOWN VOLTAGE; HIGH CURRENT DENSITIES; HIGH-SPEED PERFORMANCE; MIS-HEMT; OFF MODE; ON-RESISTANCE; POWER SUPPLY;

ELECTRIC POWER SUPPLIES TO APPARATUS; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; POWER ELECTRONICS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77956540751     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IPEC.2010.5542039     Document Type: Conference Paper

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