Switching characteristics of GaN HFETs in a half bridge package for high temperature applications

IEEE Transactions on Power Electronics

Volumn 23, Issue 2, 2008, Pages 692-697

  Nomura, Takehiko ^a   Masuda, Mitsuru ^a   Ikeda, Nariaki ^a   Yoshida, Seikoh ^a  

^a FURUKAWA ELECTRIC CO LTD   (Japan)

Author keywords

GaN; Heterojunction field effect transistors (HFETs); High temperature; Switching

Indexed keywords

BRIDGE CIRCUITS; HETEROJUNCTIONS; HIGH TEMPERATURE APPLICATIONS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM COMPOUNDS; SILICON CARBIDE; SWITCHING SYSTEMS;

HALF BRIDGE MODULE; HETEROJUNCTION FIELD EFFECT TRANSISTOR;

FIELD EFFECT TRANSISTORS;

EID: 41549110751     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2007.915671     Document Type: Article

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