V-Gate GaN HEMTs with engineered buffer for normally off operation

IEEE Electron Device Letters

Volumn 29, Issue 11, 2008, Pages 1184-1186

  Chu, Rongming ^a   Chen, Zhen ^a   DenBaars, Steven P ^a   Mishra, Umesh K ^a  

^a University of California   (United States)

Author keywords

Buffer engineering; Enhancement mode; GaN; High electron mobility transistors (HEMTs); Normally off; V gate

Indexed keywords

ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; SEMICONDUCTING GALLIUM; TRANSISTORS;

BUFFER ENGINEERING; ENHANCEMENT MODE; GAN; HIGH ELECTRON MOBILITY TRANSISTORS (HEMTS); NORMALLY OFF; V-GATE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 55149119392     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2004721     Document Type: Article

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