Normally-off operation GaN based MOSFETs for power electronics

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Volumn , Issue , 2009, Pages

  Niiyama, Yuki ^a   Ootomo, Shinya ^a   Kambayashi, Hiroshi ^a   Ikeda, Nariaki ^a   Nomura, Takehiko ^a   Kato, Sadahiro ^a  

^a FURUKAWA ELECTRIC CO LTD   (Japan)

Author keywords

GaN; Interface state density; Ion implantation; MOSFETs; Normally off mode; Power devices

Indexed keywords

GAN; INTERFACE STATE DENSITY; MOSFETS; OFF MODE; POWER DEVICES;

ELECTRIC EQUIPMENT; ELECTRIC FIELDS; GALLIUM ALLOYS; GALLIUM NITRIDE; INTEGRATED CIRCUITS; ION BOMBARDMENT; ION IMPLANTATION; MOSFET DEVICES; POWER ELECTRONICS; SEMICONDUCTING GALLIUM; SILICON CARBIDE; WIRELESS TELECOMMUNICATION SYSTEMS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 72549116634     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/csics.2009.5315770     Document Type: Conference Paper

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