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Volumn , Issue , 2009, Pages
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Normally-off 5A/1100V GaN-on-silicon device for high voltage applications
a
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Author keywords
[No Author keywords available]
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Indexed keywords
ACTIVE AREA;
ALGAN/GAN HEMTS;
AREA COST;
BOOST CONVERTER;
BREAKDOWN FIELD;
BREAKDOWN VOLTAGE;
CONVERTER EFFICIENCY;
CRITICAL FIELDS;
DC CHARACTERISTICS;
DEVICE BREAKDOWN;
DEVICE CONFIGURATIONS;
DEVICE DESIGN;
DEVICE STRUCTURES;
DIE PACKAGES;
DRAIN LEAKAGE;
DRAIN SPACINGS;
DRAIN VOLTAGE;
DYNAMIC RESISTANCE;
ELECTRIC MOTOR DRIVES;
FAST SWITCHING;
FIELD PLATES;
GATE BIAS;
GATE LENGTH;
GATE WIDTHS;
HEAT SINKING;
HIGH BREAKDOWN VOLTAGE;
HIGH ELECTRON VELOCITY;
HIGH VOLTAGE;
HIGH VOLTAGE APPLICATIONS;
HIGH-PEAK CURRENTS;
INHERENT SAFETY;
INTRINSIC PROPERTY;
JUNCTION TEMPERATURES;
LOW COST MANUFACTURING;
MAXIMUM CURRENT DENSITY;
MULTIPLE DEVICES;
NS SWITCHING;
ON-RESISTANCE;
ON-STATE RESISTANCE;
OUTPUT POWER;
PEAK CURRENTS;
PER UNIT;
POWER DEVICES;
POWER INDUSTRY;
SI DEVICES;
SI SUBSTRATES;
SI WAFER;
SILICON DEVICES;
SILICON SUBSTRATES;
SOLAR POWER;
SPECIFIC RESISTANCES;
SUBSTANTIAL REDUCTION;
SWITCHING BEHAVIORS;
SWITCHING CHARACTERIZATION;
SWITCHING LOSS;
SWITCHING PERFORMANCE;
SWITCHING SPEED;
THIN EPITAXIAL LAYER;
AUTOMOBILES;
ELECTRIC BREAKDOWN;
ELECTRIC CONVERTERS;
ELECTRIC DRIVES;
ELECTRIC PROPERTIES;
ELECTRIC VEHICLES;
ELECTRICITY;
ELECTRON DEVICES;
FIELD EFFECT TRANSISTORS;
FLUORINE;
GALLIUM NITRIDE;
HEAT RESISTANCE;
HETEROJUNCTION BIPOLAR TRANSISTORS;
HIGH ELECTRON MOBILITY TRANSISTORS;
SEMICONDUCTING SILICON COMPOUNDS;
SILICON;
SILICON CARBIDE;
SILICON WAFERS;
SOLAR ENERGY;
STRUCTURAL DESIGN;
SUBSTRATES;
SWITCHING;
GALLIUM ALLOYS;
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EID: 77952381708
PISSN: 01631918
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/IEDM.2009.5424396 Document Type: Conference Paper |
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Times cited : (30)
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References (5)
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