Normally-off AlGaN/GaN HFETs using NiOx Gate with recess

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2009, Pages 25-28

  Kaneko, Nobuo ^a   Machida, Osamu ^a   Yanagihara, Masataka ^a   Iwakami, Shinichi ^a   Baba, Ryohei ^a   Goto, Hirokazu ^a   Iwabuchi, Akio ^a  

^a SANKEN ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HFETS; BREAKDOWN VOLTAGE; FOUR-ORDER; GATE ELECTRODES; GATE WIDTHS; GATE-LEAKAGE CURRENT; MAXIMUM DRAIN CURRENT; MOSFETS; ON-RESISTANCE; P-TYPE; SI SUBSTRATES;

DRAIN CURRENT; GALLIUM NITRIDE; LEAKAGE CURRENTS; POWER ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 72949110662     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2009.5157992     Document Type: Conference Paper

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