High-performance E-mode AlGaN/GaN HEMTs with LT-GaN cap layer using gate recess techniques

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2008, Pages 129-130

  Adachi, Tatsuhiko ^a   Deguchi, Tadayoshi ^a   Nakagawa, Atsushi ^a   Terada, Yutaka ^b   Egawa, Takashi ^b  

^a JAPAN RADIO CO LTD   (Japan)

^b NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 64849106141     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2008.4800768     Document Type: Conference Paper

References (3)

1. W. B. Lanford et al., Electron Lett., vol. 41, no. 7, pp. 449-450, 2005.
2. Y.Cai et al., IEEE Electron Device Lett., vol. 41, no. 19, pp. 1081-1083, 2005.
3. T.Deguchi et al., Ext. Abst., SSDM 2006, pp. 116-117, 2006.